Typical Electrical Characteristics: N-Channel
20
V GS =10V
8.0
6.0
5.0
3
V GS = 3.5V
15
4.5
2.5
4.0
2
10
4.0
3.5
1.5
4.5
5.0
6.0
5
3.0
1
8.0
10
0
0
1
2
3
0.5
0
3
6
9
12
15
1.6
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. N-Channel On-Region Characteristics.
I D = 3.7A
I D , DRAIN CURRENT (A)
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
2
V GS = 10 V
1.4
V G S = 10V
1.2
1
0.8
1.5
1
TJ = 125°C
25°C
-55°C
0.6
-50
-25
0
25
50
75
100
125
150
0.5
0
3
6
9
12
15
10
T J , JUNCTION TEMPERATURE (°C)
Figure 3. N-Channel On-Resistance Variation with
Temperature.
I D , DRAIN CURRENT (A)
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
1.2
8
V DS = 10V
TJ = -55°C
125°C
25°C
1.1
V DS = V GS
I D = 250μA
1
6
0.9
4
0.8
2
0.7
0
1
2
3
4
5
0.6
-50
-25
0
25
50
75
100
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. N-Channel Transfer
Characteristics.
T J , JUNCTION TEMPERATURE (°C)
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDS9952A.SAM
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相关代理商/技术参数
NDS9952A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CHANNEL MOSFET, 30V, SOIC
NDS9952A_NL 制造商:Freescale Semiconductor 功能描述:
NDS9952A_Q 功能描述:MOSFET SO-8 N&P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9952A-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series Dual N and P-Channel 30 V 0.08 Ohm Field Effect Transistor -SOIC-8
NDS9953A 功能描述:MOSFET SO-8 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9953A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS9953A_D84Z 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9955 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube